• Skip to main content
  • Skip to secondary menu
  • Skip to primary sidebar
  • Skip to footer
  • Upcoming Events
    • CryptoSphere, Wrocław (February 4, 2023)
    • TMRW, Dubai (February 8-10, 2023)
    • European Blockchain Convention, Barcelona (February 15-17, 2023)
    • Blockchain Fest, Singapore (February 16-17, 2023)
    • Blockchain Economy Summit, London (February 27-28, 2023)
    • Paris Blockchain Week (March 20-24, 2023)
    • GAIN Expo, Amsterdam (May 4-5, 2023)
    • Blockchain Expo North America, Santa Clara (May 17-18, 2023)
    • COMEX, Oman (May 22-25, 2023)
    • BLOCK3000: Blockchain Battle, Lisbon (July 6-7, 2023)
    • NFT Show Europe, Valencia (July 14-15, 2023)
    • TOKEN2049, Singapore (September 13-14, 2023)
    • Blockchain Expo Europe, Amsterdam (September 26-27, 2023)
  • Past Events
    • Event Horizon
    • Blockchain Life
    • BlockShow Europe

Crypto Reporter

Online magazine about cryptocurrencies, NFTs, DeFi, GameFi and other blockchain technologies


Join us on Telegram: https://t.me/crypto_reporter
Visit Paris Blockchain Week on March 20-24, 2023
  • News
    • News Feed
    • Cryptocurrencies
      • Bitcoin
      • Altcoins
    • Payment solutions
    • Exchanges
      • Binance
      • bitFlyer
      • Bitfinex
      • CBOE
      • CME
      • Coinbase
      • Coincheck
      • Coinfloor
      • Nasdaq
      • Poloniex
    • Regulations
      • Australia
      • Belarus
      • China
      • Europe
      • India
      • Iran
      • Israel
      • Japan
      • North Korea
      • Philippines
      • Portugal
      • Russia
      • South Korea
      • Thailand
      • Turkey
      • Venezuela
      • Vietnam
      • United States
    • Blockchain platforms
    • Crypto news in brief
    • Stats & trends
    • Reviews
      • Ambrosus
      • ATN
      • Dash
      • Green Power Exchange
      • Power Ledger
      • ShapeShift
      • Waltonchain
      • Cryptocurrency market capitalization can top 4 trillion USD, under conservative estimates
    • Opinion
    • Sponsored
  • Press Releases

Transphorm Releases New GaN FET Reliability Ratings, Now Segmented by Power Level

December 15, 2022 By Business Wire

Company’s High Voltage GaN Devices Continue to Deliver Best-in-Class Reliability in Applications Crossing the Power Spectrum

GOLETA, Calif.--(BUSINESS WIRE)--$TGAN #5G--Transphorm, Inc. (Nasdaq: TGAN) — a pioneer in and a global supplier of high reliability, high performance gallium nitride (GaN) power conversion products — announced today the latest reliability ratings for its GaN power FETs. Reliability is measured by Failures in Time (FIT), an analysis that considers the number of devices reported by customers to have failed in the field when used in applications. To date, the company’s total product portfolio has achieved an average < 0.1 FIT rate based on more than 85 billion hours of field operation. This rating stands as one of the industry’s best and only reported broad power spectrum reliability rating of any GaN power solution available today.


Transphorm built its GaN platform with reliability in mind, understanding its importance when the wide bandgap technology first hit the market: even though GaN boasted higher performance than silicon-based transistors, customers wouldn’t opt to switch to the then-new technology if the devices failed in real-world use. In 2019, Transphorm was the first GaN manufacturer to publish a complete validation data set backing its reliability claims. Since then, the company regularly shares its GaN reliability achievements to help potential customers make informed decisions when choosing semiconductor suppliers. Transphorm last reported its FIT rate to be < 0.3 in Q1 2022.

This year, Transphorm takes another step toward changing how customers assess GaN FET options. The company has taken its reliability data and segmented it into two categories:

  • Low Power: GaN devices used in applications with power levels ≤ 500 W
  • High Power: GaN devices used in applications > 500 W

When looking at device performance by power level type, Transphorm’s GaN FETs yield the following reliability ratings that are notably similar to those of Silicon-based power devices:

  • Low Power: 0.06 FIT
  • High Power: 0.19 FIT

“Our high voltage GaN devices are designed into the broadest range of applications covering the widest power spectrum, from 45 W to 4 kW today with the potential to reach 10+ kW as GaN is adopted into new markets. This shows the immense versatility of our technology,” said Philip Zuk, Senior Vice President of Business Development and Marketing, Transphorm. “However, we realized that reporting just a singular reliability rating that lumps all application types together may not be as useful to customers. We felt it necessary to help them access more nuanced data that would apply to their specific design requirements. Hence, the breakdown between low and high power.”

Cross-Industry Leadership

Transphorm’s device quality + reliability continues to position the company as a high voltage GaN leader. The company ships into a variety of end markets, such as adapters, PC computing, blockchain, data centers, renewable energy, and power storage.

To learn more about the SuperGaN technology difference, visit here: http://bit.ly/38HHGF7.

About Transphorm

Transphorm, Inc., a global leader in the GaN revolution, designs and manufactures high performance and high reliability GaN semiconductors for high voltage power conversion applications. Having one of the largest Power GaN IP portfolios of more than 1,000 owned or licensed patents, Transphorm produces the industry’s first JEDEC and AEC-Q101 qualified high voltage GaN semiconductor devices. The Company’s vertically integrated device business model allows for innovation at every development stage: design, fabrication, device, and application support. Transphorm’s innovations are moving power electronics beyond the limitations of silicon to achieve over 99% efficiency, 40% more power density and 20% lower system cost. Transphorm is headquartered in Goleta, California and has manufacturing operations in Goleta and Aizu, Japan. For more information, please visit www.transphormusa.com. Follow us on Twitter @transphormusa and WeChat @ Transphorm_GaN.


Contacts

Press Contact:
Heather Ailara
211 Communications
+1.973.567.6040
heather@211comms.com

Filed Under: News Feed

Primary Sidebar

Follow Us

Press Releases

World Cup Inu (WCI) is now on Lbank Exchange, Enjin Coin (ENJ) launches latest wallet version, While Orbeon Protocol (ORBN) gives amazing return

February 2, 2023

Europe’s most influential blockchain & crypto event returns to Barcelona

February 1, 2023

METACO Harmonize Selected by DekaBank as Core Platform for Institutional Digital Asset Offering

February 1, 2023

Oasys to be Listed on Leading Japanese Crypto Exchange, bitbank

February 1, 2023

Cardano (ADA), Uniswap (UNI) and Orbeon Protocol (ORBN) Are the Top Cryptocurrencies Ready to Skyrocket

February 1, 2023

Cryptosphere

TMRW

EBC 2023

Blockchain Fest Singapore 2023

Blockchain Economy London 2023

PBW 2023

GAIN Expo 2023

Blockchain Expo North America 2023

COMEX 2023

Blockchain Expo Europe 2023

Blockchain Expo Global 2023

Footer

Crypto Reporter is an online magazine about cryptocurrencies, NFTs, DeFi, GameFi and other blockchain technologies
About us
Contact us
Submit press-release

Search

2017-2023 Crypto Reporter